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| PHOTODIODE InGaAs PIN photodiode G9906-01 Small package InGaAs PIN photodiode for C-L band G9906-01 is an InGaAs PIN photodiode designed to minimize temperature dependence of the photo sensitivity in the C-L band. It has an active area of 0.3 mm and is housed in a subminiature package making it ideal for use in smaller modules. Features Applications l C-L band temperature dependence: 0.2 dB (-10 C to +85 C) l Small package l Low dark current: 0.5 nA Max. (VR=5 V) l C-L band monitors s Absolute maximum ratings (Ta=25 C) Parameter Reverse voltage Forward current Operating temperature Storage temperature Symbol VR Max. IF Topr Tstg Condition Value 20 10 -10 to +85 -55 to +125 Unit V mA C C No condensation No condensation s Electrical and optical characteristics (Ta=25 C) Parameter Active area Spectral response range Peak sensitivity wavelength Photo sensitivity Photo response uniformity Dark current Cut-off frequency Terminal capacitance Shunt resistance Detectivity Noise equivalent power Linearity Symbol p S ID fc Ct Rsh D* NEP =1.3 m =p =1.53 to 1.62 m, T= -10 to 85 C VR=5 V VR=5 V, RL=50 -3dB VR=5 V, f=1 MHz VR=10 mV =p =p VR=5 V, RL=2 -55 to +10 dBm Condition 10 % or more of peak sensitivity Min. 0.8 0.85 -0.2 -0.15 Typ. 0.3 0.9 to 1.7 1.55 0.9 0.95 0.2 500 6 1000 5 x 1012 4 x 10-15 Max. +0.2 0.5 8 +0.15 Unit mm m m A/W dB nA MHz pF M cm * Hz1/2/W W/Hz1/2 dB 1 InGaAs PIN photodiode s Spectral response 0.5 0.4 (Typ. =1.58 m, T=10 C standard, Flat window) G9906-01 s Dark current vs. reverse voltage 10 nA (Typ. Ta=25 C) RELATIVE RESPONSE (dB) 0.3 0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5 1.52 1.53 1.54 1.55 1.56 1.57 1.58 1.59 1.60 1.61 1.62 1.63 1.64 DARK CURRENT 0.2 -10 C 0 C 10 C 25 C 35 C 45 C 55 C 65 C 75 C 85 C 1 nA 100 pA 10 pA 1 pA 0.01 0.1 1 10 100 WAVELENGTH (m) KIRDB0341EA REVERSE VOLTAGE (V) KIRDB0339EA s Terminal capacitance vs. reverse voltage 1 nF (Typ. Ta=25 C) s Shunt resistance vs. element temperature 1 T (Typ. VR=10 mV) 100 G TERMINAL CAPACITANCE SHUNT RESISTANCE 0.1 1 10 100 100 pF 10 G 10 pF 1 G 100 M 1 pF 10 M 100 fF 0.01 1 M -40 -20 0 20 40 60 80 100 REVERSE VOLTAGE (V) KIRDB0340EA ELEMENT TEMPERATURE (C) KIRDB0338EA s Dimensional outline (unit: mm) 2.45-0.05 1.96-0.05 +0.10 +0.25 PHOTOSENSITIVE SURFACE 0.4 x 0.4 10 MIN. 25 1 0.45 0.05 1.6 0.2 3.3-0.3 +0.2 ANODE CATHODE CHIP CENTER TO BASE CENTER X, Y0.1 KIRDA0186EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KIRD1075E02 Jun. 2006 DN |
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